High-Voltage Schottky Barrier Diode on Silicon Substrate-Reference-Cited by-同舟云学术

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High-Voltage Schottky Barrier Diode on Silicon Substrate

Published:2011-06-20 Issue:6 Volume:50 Page:06GF17
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ha Min-Woo,Roh Cheong Hyun,Hwang Dae Won,Choi Hong Goo,Song Hong Joo,Lee Jun Ho,Park Jung Ho,Seok Ogyun,Lim Jiyong,Han Min-Koo,Hahn Cheol-Koo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference8 articles.

1. AlGaN/GaN Schottky-ohmic combined anode field effect diode with fluoride-based plasma treatment

2. High-performance AlGaN∕GaN lateral field-effect rectifiers compatible with high electron mobility transistors

3. Improved reverse blocking characteristics in AlGaN/GaN Schottky barrier diodes based on AlN template

4. New GaN Schottky barrier diode employing a trench on AlGaN/GaN heterostructure

5. 160-A bulk GaN Schottky diode array

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Koopmans’ tuning of HSE hybrid density functional for calculations of defects in semiconductors: A case study of carbon acceptor in GaN;Journal of Applied Physics;2020-04-21

2. The demonstration of recessed anodes AlGaN/GaN Schottky barrier diodes using microwave cyclic plasma oxidation/wet etching techniques;Japanese Journal of Applied Physics;2019-06-17

3. Electrical characterization of HVPE GaN containing different concentrations of carbon dopants;Semiconductor Science and Technology;2018-11-20

4. Pulsed photo-ionization spectroscopy in carbon doped MOCVD GaN epi-layers on Si;Semiconductor Science and Technology;2018-06-19

5. Determination of the electron-capture coefficients and the concentration of free electrons in GaN from time-resolved photoluminescence;Scientific Reports;2016-11-30

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