The demonstration of recessed anodes AlGaN/GaN Schottky barrier diodes using microwave cyclic plasma oxidation/wet etching techniques
Author:
Funder
Ministry of Science and Technology, Taiwan
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://iopscience.iop.org/article/10.7567/1347-4065/ab2542/pdf
Reference31 articles.
1. 1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon
2. 2.07-kV AlGaN/GaN Schottky Barrier Diodes on Silicon With High Baliga’s Figure-of-Merit
3. 0.34 $\text{V}_{\mathrm {T}}$ AlGaN/GaN-on-Si Large Schottky Barrier Diode With Recessed Dual Anode Metal
4. High-Voltage Schottky Barrier Diode on Silicon Substrate
5. GaN on Si Technologies for Power Switching Devices
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1. Vertical GaN-on-GaN Trench Junction Barrier Schottky Diodes With a Slanted Sidewall;IEEE Journal of the Electron Devices Society;2024
2. Investigation of the leakage mechanism in multi-channel GaN-on-Si SBDs;Japanese Journal of Applied Physics;2023-09-01
3. Experimental Study on Static and Dynamic Characteristics of Ga2O3 Schottky Barrier Diodes With Compound Termination;IEEE Transactions on Power Electronics;2021-10
4. A review on GaN-based two-terminal devices grown on Si substrates;Journal of Alloys and Compounds;2021-07
5. A novel AlGaN/GaN Schottky barrier diode with partial p-AlGaN cap layer and recessed dual-metal anode for high breakdown and low turn-on voltage;Semiconductor Science and Technology;2019-11-29
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