Determination of the electron-capture coefficients and the concentration of free electrons in GaN from time-resolved photoluminescence
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep37511.pdf
Reference24 articles.
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2. Saitoh, Y. et al. Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates. Appl. Phys. Express 3, 081001 (2010).
3. Everts, J. et al. A 96% Efficient High-Frequency DC-DC Converter Using E-Mode GaN DHFETs on Si. Electron Device Letters, IEEE 32, 1370–1372 (2011).
4. Ha, M.-W. et al. High-Voltage Schottky Barrier Diode on Silicon Substrate. Jap. J. Appl. Phys. 50, 06GF17 (2011).
5. Paskova, T., Hanser, D. A. & Evans, K. R. GaN Substrates for III-Nitride Devices. Proc. of the IEEE 98, 1324–1338 (2010).
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