Koopmans’ tuning of HSE hybrid density functional for calculations of defects in semiconductors: A case study of carbon acceptor in GaN

Author:

Demchenko D. O.1ORCID,Reshchikov M. A.1ORCID

Affiliation:

1. Department of Physics, Virginia Commonwealth University, Richmond, Virginia 23284, USA

Funder

National Science Foundation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Photoluminescence from GaN Implanted with Be and F;physica status solidi (b);2023-05-25

2. Photoluminescence from defects in GaN;Gallium Nitride Materials and Devices XVIII;2023-03-15

3. Photoluminescence related to Ca in GaN;Physical Review B;2022-07-28

4. Electronic structure of intrinsic defects in c -gallium nitride: Density functional theory study without the jellium approximation;Physical Review B;2022-06-10

5. Roadmap for point defects in GaN;Semiconductors and Semimetals;2022

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