High-performance AlGaN∕GaN lateral field-effect rectifiers compatible with high electron mobility transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2951615
Reference20 articles.
1. Kilovolt AlGaN/GaN HEMTs as Switching Devices
2. High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior
3. High Breakdown Voltage AlGaN–GaN HEMTs Achieved by Multiple Field Plates
4. High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates
5. The 1.6-kV AlGaN/GaN HFETs
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