An Ultralow Turn-On GaN Lateral Field-Effect Rectifier With Schottky-MIS Cascode Anode-Reference-Cited by-同舟云学术

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An Ultralow Turn-On GaN Lateral Field-Effect Rectifier With Schottky-MIS Cascode Anode

Published:2022-11 Issue:11 Volume:69 Page:6485-6491
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Wang Fangzhou¹^ORCID,Wang Zeheng¹^ORCID,Chen Wanjun¹^ORCID,Sun Ruize¹^ORCID,Xu Wenjun²,Wang Yang²,Jia Haiqiang³,Zhang Bo¹^ORCID

Affiliation:

1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC), Chengdu, China

2. Songshan Lake Materials Laboratory, Dongguan, China

3. Key Laboratory for Renewable Energy, Institute of Physics, Chinese Academy of Sciences, Beijing, China

Funder

Key-Area Research and Development Program of Guangdong Province, China

National Natural Science Foundation of China

Guangdong Basic and Applied Basic Research Foundation, China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9926983/09896845.pdf?arnumber=9896845

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Charge compensation impact on the access region resistance in AlGaN/GaN devices;Micro and Nanostructures;2023-04

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