A Comparative Study on G-to-S ESD Robustness of the Ohmic-Gate and Schottky-Gate p-GaN HEMTs-Reference-Cited by-同舟云学术

A Comparative Study on G-to-S ESD Robustness of the Ohmic-Gate and Schottky-Gate p-GaN HEMTs

Published:2023-05 Issue:5 Volume:70 Page:2229-2234
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Shi Yijun¹^ORCID,He Zhiyuan¹^ORCID,Huang Yun¹,Cai Zongqi¹^ORCID,Chen Yiqiang¹^ORCID,Cheng Liye¹,Chen Wanjun²^ORCID,Sun Ruize¹^ORCID,Liu Chao¹^ORCID,Lu Guoguang¹,Zhang Bo¹^ORCID

Affiliation:

1. China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou, China

2. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Natural Science Foundation of Guangdong Province

Guangzhou Basic and Applied Basic Research Project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10106527/10077767.pdf?arnumber=10077767

Reference28 articles.

1. Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure

2. Analysis of Trap and Recovery Characteristics Based on Low-Frequency Noise for E-Mode GaN HEMTs Under Electrostatic Discharge Stress

3. Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation

4. Degradation Behavior and Mechanisms of E-Mode GaN HEMTs With p-GaN Gate Under Reverse Electrostatic Discharge Stress

5. Electrostatic Discharge (ESD) Behavior of p-GaN HEMTs

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3. Self-Protection Mechanism of Schottky-Type p-GaN Gate HEMTs Under Forward Gate ESD Stress;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02

4. Enhancing the Performance of E-Mode AlGaN/GaN HEMTs With Recessed Gates Through Low-Damage Neutral Beam Etching and Post-Metallization Annealing;IEEE Open Journal of Nanotechnology;2023

5. Enhancement-Mode HEMT Performance and Mitigating Delay Through Double-Heterojunction With Connect Channel Utilization for Trap Effect Reduction;IEEE Access;2023