Enhancing the Performance of E-Mode AlGaN/GaN HEMTs With Recessed Gates Through Low-Damage Neutral Beam Etching and Post-Metallization Annealing-Reference-Cited by-同舟云学术

Enhancing the Performance of E-Mode AlGaN/GaN HEMTs With Recessed Gates Through Low-Damage Neutral Beam Etching and Post-Metallization Annealing

Published:2023 Issue: Volume:4 Page:150-155
ISSN:2644-1292
Container-title:IEEE Open Journal of Nanotechnology
language:
Short-container-title:IEEE Open J. Nanotechnol.

Author:

Chen Yi-Ho¹^ORCID,Ohori Daisuke²^ORCID,Aslam Muhammad³,Lee Yao-Jen⁴^ORCID,Li Yiming⁵^ORCID,Samukawa Seiji⁶^ORCID

Affiliation:

1. Parallel and Scientific Computing Laboratory, Graduate Degree Program of College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

2. Institute of Fluid Science, Tohoku University, Sendai, Japan

3. Parallel and Scientific Computing Laboratory, Electrical Engineering and Computer Science International Graduate Program, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

4. Institute of Pioneer Semiconductor Innovation, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

5. Parallel and Scientific Computing Laboratory, Institute of Communications Engineering, Institute of Biomedical Engineering, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

6. Department of Electronics and Electrical Engineering, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

Funder

National Science and Technology Council

2022 Qualcomm Taiwan Research Program

National Yang Ming Chiao Tung University

Powerchip Semiconductor Manufacturing Corporation

Taiwan Semiconductor Research Institute facilities

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Materials Chemistry,Electrical and Electronic Engineering,Computer Science Applications,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/8782713/10007543/10223256.pdf?arnumber=10223256

Reference31 articles.

1. Remarkable Reduction in IG with an Explicit Investigation of the Leakage Conduction Mechanisms in a Dual Surface-Modified Al2O3/SiO2 Stack Layer AlGaN/GaN MOS-HEMT

2. Post-annealing effects on device performance of AlGaN/GaN HFETs

3. The effect of post-metal annealing on DC and RF performance of AlGaN/GaN HEMT

4. Off-state leakage current reduction in AlGaN/GaN high electron mobility transistors by combining surface treatment and post-gate annealing

5. Design and Optimization of Self‐Isolation GaN HEMT with Lateral‐Polarity‐Structure