Self-Protection Mechanism of Schottky-Type p-GaN Gate HEMTs Under Forward Gate ESD Stress-Reference-Cited by-同舟云学术

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Self-Protection Mechanism of Schottky-Type p-GaN Gate HEMTs Under Forward Gate ESD Stress

Published:2024-06-02 Issue: Volume: Page:271-274
ISSN:
Container-title:2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Sun Jiahui¹,Shu Ji¹,Zheng Zheyang¹,Chen Kevin J.¹

Affiliation:

1. The Hong Kong University of Science and Technology,Dept. of Electronic and Computer Engineering,Hong Kong,China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10579539/10579462/10579656.pdf?arnumber=10579656

Reference14 articles.

1. Power GaN 2022: Market and technology;Ayari;Yole Group,2022

2. GaN-on-Si Power Technology: Devices and Applications

3. Characteristics and Evaluation Approaches of Human-Body-Model Electrostatic Discharge Across Schottky p-GaN Gate HEMTs

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