Strain-Dependent Characteristics of Triangular Silicon Nanowire-Based Field-Effect Transistors on Flexible Plastics
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference26 articles.
1. Plastic electronics and future trends in microelectronics
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Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Flexible Thermoelectric Generators Composed of n-and p-Type Silicon Nanowires Fabricated by Top-Down Method;Advanced Energy Materials;2016-12-05
2. Modeling and estimation of process-induced stress in the nanowire field-effect-transistors (NW-FETs) on Insulator-on-Silicon substrates with high-k gate-dielectrics;Superlattices and Microstructures;2016-10
3. High performance high-κ/metal gate complementary metal oxide semiconductor circuit element on flexible silicon;Applied Physics Letters;2016-02-29
4. Steep Subthreshold Swing n- and p-Channel Operation of Bendable Feedback Field-Effect Transistors with p+–i–n+ Nanowires by Dual-Top-Gate Voltage Modulation;Nano Letters;2015-07-31
5. The effect of tensile and bending strain on the electrical properties of p-type 〈110〉 silicon nanowires;Nanotechnology;2015-06-10
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