High performance high-κ/metal gate complementary metal oxide semiconductor circuit element on flexible silicon-Reference-Cited by-同舟云学术

High performance high-κ/metal gate complementary metal oxide semiconductor circuit element on flexible silicon

Published:2016-02-29 Issue:9 Volume:108 Page:094102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Torres Sevilla G. A.¹,Almuslem A. S.¹,Gumus A.¹,Hussain A. M.¹,Cruz M. E.¹^ORCID,Hussain M. M.¹

Affiliation:

1. Integrated Nanotechnology Lab, Electrical Engineering, Computer Electrical Mathematical Science and Engineering Division, 4700 King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia

Funder

King Abdullah University of Science and Technology (KAUST)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4943020

Reference35 articles.

1. Synthesis, assembly and applications of semiconductor nanomembranes

2. Flexible Nanoscale High-Performance FinFETs

3. Out-of-plane strain effect on silicon-based flexible FinFETs

4. Low-cost high-quality crystalline germanium based flexible devices

5. Flexible and Transparent Silicon-on-Polymer Based Sub-20 nm Non-planar 3D FinFET for Brain-Architecture Inspired Computation

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