Influence of Self-Heating Effect on Interface Trap Generation in Highly Flexible Single-Crystalline Si Nanomembrane Transistors-Reference-Cited by-同舟云学术

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Influence of Self-Heating Effect on Interface Trap Generation in Highly Flexible Single-Crystalline Si Nanomembrane Transistors

Published:2019-10-01 Issue:10 Volume:19 Page:6481-6486
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:j nanosci nanotechnol

Author:

Bong Jae Hoon¹,Kim Seung-Yoon¹,Jeong Chan Bae²,Chang Ki Soo²,Hwang Wan Sik³,Cho Byung Jin¹

Affiliation:

1. School of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, 34141, Korea

2. Division of Scientific Instrumentation, Korea Basic Science Institute, Daejeon, 34133, Korea 3

3. Department of Materials Engineering, Korea Aerospace University, Goyang, 10540, Korea

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An 8-nm-thick Sn-doped polycrystalline β-Ga2O3 MOSFET with a “normally off” operation;Applied Physics Letters;2021-09-20

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