Steep Subthreshold Swing n- and p-Channel Operation of Bendable Feedback Field-Effect Transistors with p+–i–n+ Nanowires by Dual-Top-Gate Voltage Modulation-Reference-Cited by-同舟云学术

Steep Subthreshold Swing n- and p-Channel Operation of Bendable Feedback Field-Effect Transistors with p+–i–n+ Nanowires by Dual-Top-Gate Voltage Modulation

Published:2015-07-31 Issue:8 Volume:15 Page:4905-4913
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Jeon Youngin¹,Kim Minsuk¹,Lim Doohyeok¹,Kim Sangsig¹

Affiliation:

1. Department of Electrical Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 136-701, Republic of Korea

Funder

National Research Foundation of Korea

Samsung

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.5b00606

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