500-nm Optical Gain Anisotropy of Semipolar (11\bar22) InGaN Quantum Wells
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/2/i=7/a=071001/pdf
Reference11 articles.
1. Nonpolar m-plane InGaN multiple quantum well laser diodes with a lasing wavelength of 499.8 nm
2. 500 nm electrically driven InGaN based laser diodes
3. Lasing and optical gain around 500 nm from optically pumped lasers grown on c-plane GaN substrates
4. Stimulated Emission at Blue-Green (480 nm) and Green (514 nm) Wavelengths from Nonpolar (m-plane) and Semipolar (11\bar22) InGaN Multiple Quantum Well Laser Diode Structures
5. Stimulated emission at 474nm from an InGaN laser diode structure grown on a (112¯2) GaN substrate
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1. Optical anisotropy of (11 2¯3) semipolar InGaN quantum wells homoepitaxially grown on GaN substrates;Journal of Applied Physics;2022-02-21
2. Optical polarization switching in semipolar (202¯1) InGaN multiple quantum wells induced by strain engineering;Applied Physics Letters;2017-12-04
3. On optical polarization and charge carrier statistics of nonpolar InGaN quantum wells;physica status solidi (b);2015-09-10
4. Valence band states and polarized optical emission from nonpolar and semipolar III–nitride quantum well optoelectronic devices;Japanese Journal of Applied Physics;2014-09-25
5. InGaN based green laser diodes on semipolar GaN substrate;Japanese Journal of Applied Physics;2014-09-04
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