Stimulated emission at 474nm from an InGaN laser diode structure grown on a (112¯2) GaN substrate
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2799876
Reference11 articles.
1. Recent progress of AlInGaN laser diodes
2. Recent progress of high-power GaN-based laser diodes
3. Gain suppression phenomena observed in InxGa1−xN quantum well laser diodes emitting at 470nm
4. Continuous-Wave Operation ofm-Plane InGaN Multiple Quantum Well Laser Diodes
5. Demonstration of Nonpolarm-Plane InGaN/GaN Laser Diodes
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2. InGaN/AlGaN stress compensated superlattices coherently grown on semipolar (112¯2) GaN substrates;physica status solidi (b);2015-09-21
3. Optical properties and structural investigations of (11-22)-oriented GaN/Al0.5Ga0.5N quantum wells grown by molecular beam epitaxy;Journal of Applied Physics;2015-07-14
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