Gain suppression phenomena observed in InxGa1−xN quantum well laser diodes emitting at 470nm
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2404971
Reference11 articles.
1. Recent progress of AlInGaN laser diodes
2. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures
3. Determining the distribution of silicon monofluoride on hydrofluoric acid-treated Si (111) surface by exchange reaction with molecules at the solid/liquid interface
4. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
5. High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates
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