Controlling the orientations of directional sputtered non- and semi-polar GaN/AlN layers
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
https://iopscience.iop.org/article/10.7567/1347-4065/ab1252/pdf
Reference43 articles.
1. Nobel Lecture: Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p -type GaN by Mg doping followed by low-energy electron beam irradiation
2. Nobel Lecture: Fascinated journeys into blue light
3. Nobel Lecture: Background story of the invention of efficient blue InGaN light emitting diodes
4. Origin of the “green gap”: Increasing nonradiative recombination in indium-rich GaInN/GaN quantum well structures
5. Crystal orientation effects on electronic properties of wurtzite InGaN/GaN quantum wells
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1. How to Make Semi‐Polar InGaN Light Emitting Diodes with High Internal Quantum Efficiency: The Importance of the Internal Field;Laser & Photonics Reviews;2024-08-31
2. Impact of graphene state on the orientation of III–nitride;Applied Physics Letters;2023-09-18
3. Understanding indium incorporation of InGaN grown on polar, semi-polar, and non-polar orientation by metal–organic vapor phase epitaxy;Applied Physics Letters;2022-08-22
4. Defect characterization of {101¯3} GaN by electron microscopy;Journal of Applied Physics;2022-01-21
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