Optical polarization switching in semipolar (202¯1) InGaN multiple quantum wells induced by strain engineering
Author:
Affiliation:
1. Sensors and Electron Devices Directorate, U.S. Army Research Laboratory, Adelphi, Maryland 20873, USA
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5005536
Reference21 articles.
1. 384 nm laser diode grown on a (202¯1) semipolar relaxed AlGaN buffer layer
2. Performance and polarization effects in (112¯2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers
3. Anisotropic Optical Matrix Elements in Strained GaN Quantum Wells on Semipolar and Nonpolar Substrates
4. Polarized light emission from semipolar GaInN quantum wells on {11¯01} GaN facets
5. Impact of inhomogeneous broadening on optical polarization of high-inclination semipolar and nonpolarInxGa1−xN/GaNquantum wells
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Anisotropic structural and optical properties of semi-polar (20–21) InGaN/GaN multiple quantum wells grown on patterned sapphire substrates;Semiconductor Science and Technology;2024-02-06
2. Strain relaxation process of undoped and Si-doped semipolar AlxGa1−xN grown on (202¯1) bulk GaN substrate;Journal of Crystal Growth;2020-03
3. Control of optical polarization properties by manipulation of anisotropic strain in nonpolar m-plane GaInN/GaN quantum wells;Applied Physics Letters;2019-02-04
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