Control of optical polarization properties by manipulation of anisotropic strain in nonpolar m-plane GaInN/GaN quantum wells
Author:
Affiliation:
1. Institute of Applied Physics, Technische Universität Braunschweig, Mendelssohnstraße 2, 38106 Braunschweig, Germany
2. Laboratory for Emerging Nanometrology, TU Braunschweig, 38106 Braunschweig, Germany
Funder
Deutsche Forschungsgemeinschaft
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5064852
Reference30 articles.
1. High‐power InGaN single‐quantum‐well‐structure blue and violet light‐emitting diodes
2. High-Power, Long-Lifetime InGaN Multi-Quantum-Well-Structure Laser Diodes
3. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
4. Reduction of oscillator strength due to piezoelectric fields inGaN/AlxGa1−xNquantum wells
5. Strain-induced defects as nonradiative recombination centers in green-emitting GaInN/GaN quantum well structures
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1. Effects of Buffer Layer on Structural Properties of Nonpolar (112¯0)-Plane GaN Film;Crystals;2023-07-22
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3. Defect effect on the performance of nonpolar GaN-based ultraviolet photodetectors;Applied Physics Letters;2021-02-01
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