Strain-induced defects as nonradiative recombination centers in green-emitting GaInN/GaN quantum well structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4813446
Reference17 articles.
1. High dislocation densities in high efficiency GaN‐based light‐emitting diodes
2. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
3. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
4. Reduction of oscillator strength due to piezoelectric fields inGaN/AlxGa1−xNquantum wells
5. Defects in epitaxial multilayers
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