Author:
Zhao Jianguo,Chen Kai,Gong Maogao,Hu Wenxiao,Liu Bin,Tao Tao,Yan Yu,Xie Zili,Li Yuanyuan,Chang Jianhua,Wang Xiaoxuan,Cui Qiannan,Xu Chunxiang,Zhang Rong,Zheng Youdou
Abstract
Nonpolar (
11
2
¯
0
) plane In
x
Ga1−x
N epilayers comprising the entire In content (x) range were successfully grown on nanoscale GaN islands by metal-organic chemical vapor deposition. The structural and optical properties were studied intensively. It was found that the surface morphology was gradually smoothed when x increased from 0.06 to 0.33, even though the crystalline quality was gradually declined, which was accompanied by the appearance of phase separation in the In
x
Ga1−x
N layer. Photoluminescence wavelengths of 478 and 674 nm for blue and red light were achieved for x varied from 0.06 to 0.33. Furthermore, the corresponding average lifetime (τ
1/e
) of carriers for the nonpolar InGaN film was decreased from 406 ps to 267 ps, indicating that a high-speed modulation bandwidth can be expected for nonpolar InGaN-based light-emitting diodes. Moreover, the bowing coefficient (b) of the (
11
2
¯
0
) plane InGaN was determined to be 1.91 eV for the bandgap energy as a function of x.
Subject
General Physics and Astronomy
Cited by
4 articles.
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