384 nm laser diode grown on a (202¯1) semipolar relaxed AlGaN buffer layer-Reference-Cited by-同舟云学术

384 nm laser diode grown on a (202¯1) semipolar relaxed AlGaN buffer layer

Published:2012-04-16 Issue:16 Volume:100 Page:161107
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Haeger Daniel A.,Young Erin C.,Chung Roy B.,Wu Feng,Pfaff Nathan A.,Tsai Min,Fujito Kenji,DenBaars Steven P.,Speck James S.,Nakamura Shuji,Cohen Daniel A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4704560

Reference23 articles.

1. 365 nm Ultraviolet Laser Diodes Composed of Quaternary AlInGaN Alloy

2. A 342-nm ultraviolet AlGaN multiple-quantum-well laser diode

3. Pseudomorphically Grown Ultraviolet C Photopumped Lasers on Bulk AlN Substrates

4. Ultraviolet semiconductor laser diodes on bulk AlN

5. Ultraviolet laser diodes on sapphire and AlN substrates

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