Pseudomorphically Grown Ultraviolet C Photopumped Lasers on Bulk AlN Substrates-Reference-Cited by-同舟云学术

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Pseudomorphically Grown Ultraviolet C Photopumped Lasers on Bulk AlN Substrates

Published:2011-08-10 Issue:9 Volume:4 Page:092101
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Wunderer Thomas,Chua Christopher L.,Yang Zhihong,Northrup John E.,Johnson Noble M.,Garrett Gregory A.,Shen Hongen,Wraback Michael

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/4/i=9/a=092101/pdf

Reference19 articles.

1. AlGaN/GaN quantum well ultraviolet light emitting diodes

2. Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN

3. Ultraviolet GaN Single Quantum Well Laser Diodes

4. Demonstration of an ultraviolet 336 nm AlGaN multiple-quantum-well laser diode

5. Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levels

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1. Performance improvement of 263 nm AlGaN DUV LDs with different doping concentration and composition graded EBL Techniques;Physica Scripta;2024-01-12

2. Optical Anisotropy and Photopumped Lasing near 250 nm from Semipolar (11¯02) Al x Ga 1−x N / AlN Quantum Wells with Cleaved Mirrors;Physical Review Applied;2022-10-03

3. Continuous-wave lasing of AlGaN-based ultraviolet laser diode at 274.8 nm by current injection;Applied Physics Express;2022-04-01

4. Impacts of Si-doping on vacancy complex formation and their influences on deep ultraviolet luminescence dynamics in Al x Ga1-x N films and multiple quantum wells grown by metalorganic vapor phase epitaxy;Japanese Journal of Applied Physics;2021-12-28

5. Correlation of Defects and Lasing Threshold for AlGaN Deep Ultraviolet Lasers Grown by Molecular Beam Epitaxy;physica status solidi (b);2021-08-20

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