Impact of inhomogeneous broadening on optical polarization of high-inclination semipolar and nonpolarInxGa1−xN/GaNquantum wells-Reference-Cited by-同舟云学术

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Impact of inhomogeneous broadening on optical polarization of high-inclination semipolar and nonpolarInxGa1−xN/GaNquantum wells

Published:2016-06-27 Issue:23 Volume:93 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Mounir Christian,Schwarz Ulrich T.,Koslow Ingrid L.,Kneissl Michael,Wernicke Tim,Schimpke Tilman,Strassburg Martin

Funder

Deutsche Forschungsgemeinschaft

Alexander von Humboldt-Stiftung

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.93.235314/fulltext

Reference44 articles.

1. Polarization anisotropy in the electroluminescence of m-plane InGaN–GaN multiple-quantum-well light-emitting diodes

2. Polarization switching phenomena in semipolarInxGa1−xN/GaNquantum well active layers

3. On the optical polarization properties of semipolar InGaN quantum wells

4. Origin of Luminescence from InGaN Diodes

5. InGaN/GaN quantum wells for polariton laser diodes: Role of inhomogeneous broadening

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2. Carrier Transport in a Deep Ultraviolet Mixed Quantum Well Light Emitting Diode;IEEE Photonics Journal;2024-02

3. Basics of simulations and carrier localization effects in semiconductor materials;Encyclopedia of Condensed Matter Physics;2024

4. Carrier Transport in Multi Colour Deep Ultraviolet Light Emitting Diodes;2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD);2022-09-12

5. Photoluminescence Study of Carrier Localization and Recombination in Nearly Strain‐Balanced Nonpolar InGaN/AlGaN Quantum Wells;physica status solidi (b);2022-03-06

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