Polarization anisotropy in the electroluminescence of m-plane InGaN–GaN multiple-quantum-well light-emitting diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1875765
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1. Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect
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3. Reduction of oscillator strength due to piezoelectric fields inGaN/AlxGa1−xNquantum wells
4. Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells
5. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
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