Effect of Postoxidation Annealing on Reliability of Thermal Oxides Grown on n-Type 4H–SiC(0001) Wafer
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference13 articles.
1. Effects of anneals in ammonia on the interface trap density near the band edges in 4H–silicon carbide metal-oxide-semiconductor capacitors
2. Improved oxidation procedures for reduced SiO2/SiC defects
3. Correlation between channel mobility and shallow interface traps in SiC metal–oxide–semiconductor field-effect transistors
4. Strong dependence of the inversion mobility of 4H and 6H SiC(0001) MOSFETs on the water content in pyrogenic re-oxidation annealing
5. Reduction of interface-state density in 4H–SiC n-type metal–oxide–semiconductor structures using high-temperature hydrogen annealing
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Low temperature wet-O2 annealing process for enhancement of inversion channel mobility and suppression of Vfb instability on 4H-SiC (0001) Si-face;Applied Physics Letters;2018-10-22
2. Evaluation method of threshold voltage shift of SiC MOSFETs under negative gate bias using n-type SiC MOS capacitors;Japanese Journal of Applied Physics;2016-01-22
3. Design, Fabrication, and Characterization of Ni/4H-SiC (0001) Schottky Diodes Array Equipped With Field Plate and Floating Guard Ring Edge Termination Structures;IEEE Transactions on Semiconductor Manufacturing;2012-11
4. Significant Improvement in Reliability of Thermal Oxide on 4H-SiC (0001) Face Using Ammonia Post-Oxidation Annealing;Materials Science Forum;2010-04
5. Evaluation of 4H-SiC Thermal Oxide Reliability Using Area-Scaling Method;Japanese Journal of Applied Physics;2009-08-20
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