Effects of anneals in ammonia on the interface trap density near the band edges in 4H–silicon carbide metal-oxide-semiconductor capacitors-Reference-Cited by-同舟云学术

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Effects of anneals in ammonia on the interface trap density near the band edges in 4H–silicon carbide metal-oxide-semiconductor capacitors

Published:2000-11-27 Issue:22 Volume:77 Page:3601-3603
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chung Gilyong,Tin Chin Che,Williams John R.,McDonald K.,Di Ventra M.,Chanana R. K.,Pantelides S. T.,Feldman L. C.,Weller R. A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1328370

Reference14 articles.

1. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review

2. Significantly improved performance of MOSFETs on silicon carbide using the 15R-SiC polytype

3. Intrinsic SiC/SiO2 Interface States

4. The Effect of Si:C Source Ratio on SiO₂/SiC Interface State Density for Nitrogen Doped 4H and 6H-SiC

5. Anomalously High Density of Interface States Near the Conduction Band in SiO₂/4H-SiC MOS Devices

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3. Trap passivation of 4H-SiC/SiO2 interfaces by nitrogen annealing;Journal of Applied Physics;2023-06-06

4. Investigation of Reducing Interface State Density in 4H-SiC by Increasing Oxidation Rate;Nanomaterials;2023-05-06

5. Reliability and Stability Improvement of MOS Capacitors via Nitrogen–Hydrogen Mixed Plasma Pretreatment for SiC Surfaces;ACS Applied Materials & Interfaces;2023-03-29

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