Low temperature wet-O2 annealing process for enhancement of inversion channel mobility and suppression of Vfb instability on 4H-SiC (0001) Si-face
Author:
Affiliation:
1. Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
Funder
New Energy and Industrial Technology Development Organization
Japan Society for the Promotion of Science
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5042038
Reference26 articles.
1. SiC power-switching devices-the second electronics revolution?
2. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
3. Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors
4. Inversion layer carrier concentration and mobility in 4H–SiC metal-oxide-semiconductor field-effect transistors
5. Intrinsic SiC/SiO2 Interface States
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