Inversion layer carrier concentration and mobility in 4H–SiC metal-oxide-semiconductor field-effect transistors-Reference-Cited by-同舟云学术

Inversion layer carrier concentration and mobility in 4H–SiC metal-oxide-semiconductor field-effect transistors

Published:2010-09 Issue:5 Volume:108 Page:054509
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Dhar S.,Haney S.,Cheng L.,Ryu S.-R.,Agarwal A. K.,Yu L. C.,Cheung K. P.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3484043

Reference32 articles.

1. 20 A, 1200 V 4H-SiC DMOSFETs for energy conversion systems

2. L. D. Stevanovic, K. S. Matocha, P. A. Losee, J. S. Glaser, J. J. Nasadoski, and S. D. Arthur, 2010 25th Annual IEEE Applied Power Electronics Conference and Exposition (APEC 2010), Palm Springs, CA, 21–25 February 2010 (IEEE, New York, 2010), pp. 401–407.

3. Numerical and experimental characterization of 4H-silicon carbide lateral metal-oxide-semiconductor field-effect transistor

4. Comparison of Inversion Layer Electron Transport of Lightly Doped 4H and 6H SiC MOSFETs

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