Temperature-Dependent Interface-State Response in an Al2O3/n-GaN Structure
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference18 articles.
1. Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors
2. Al2O3Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers
3. Systematic Study of Insulator Deposition Effect (Si3N4, SiO2, AlN, and Al2O3) on Electrical Properties in AlGaN/GaN Heterostructures
4. Discrete surface state related to nitrogen-vacancy defect on plasma-treated GaN surfaces
5. Effects of nitrogen deficiency on electronic properties of AlGaN surfaces subjected to thermal and plasma processes
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