Capture and emission mechanisms of defect states at interface between nitride semiconductor and gate oxides in GaN-based metal-oxide-semiconductor power transistors-Reference-Cited by-同舟云学术

Capture and emission mechanisms of defect states at interface between nitride semiconductor and gate oxides in GaN-based metal-oxide-semiconductor power transistors

Published:2019-10-28 Issue:16 Volume:126 Page:164505
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Huang Sen¹²^ORCID,Wang Xinhua¹,Liu Xinyu¹²^ORCID,Zhao Rui¹²,Shi Wen¹²,Zhang Yichuan¹²,Fan Jie¹,Yin Haibo¹,Wei Ke¹,Zheng Yingkui¹,Shi Jingyuan¹,Wang Xiaolei¹,Wang Wenwu¹²,Sun Qian³,Chen Kevin J.⁴

Affiliation:

1. Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China

2. School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China

3. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

4. Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon 999077, HongKong

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5125825

Reference36 articles.

1. Spontaneous polarization and piezoelectric constants of III-V nitrides

2. GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric