Novel EUV Resist Materials for 7 nm Node and Beyond

Author:

Furutani Hajime1,Shirakawa Michihiro1,Nihashi Wataru1,Sakita Kyohei1,Oka Hironori1,Fujita Mitsuhiro1,Omatsu Tadashi1,Tsuchihashi Toru1,Fujmaki Nishiki1,Fujimori Toru1

Affiliation:

1. Electronic Materials Research Laboratories, Research & Development Management Headquarters, FUJIFILM Corporation

Publisher

Technical Association of Photopolymers, Japan

Subject

Materials Chemistry,Organic Chemistry,Polymers and Plastics

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Photoresist stochastic defect generation depending on alkyl chain length and concentration of tetraalkylammonium hydroxide in alkali aqueous developer;Japanese Journal of Applied Physics;2023-03-23

2. Recent Status of the Stochastic Issues of Photoresist Materials in EUV Lithography;Journal of Photopolymer Science and Technology;2022-12-16

3. Recent status of the stochastic issues of photoresist materials in EUV lithography;International Conference on Extreme Ultraviolet Lithography 2022;2022-12-01

4. Recent status of the stochastic issues of photoresist materials in EUV lithography;2022 International Workshop on Advanced Patterning Solutions (IWAPS);2022-10-21

5. Selective contaminant removal in EUV photoresists using a tailored functionality filter;Advances in Patterning Materials and Processes XXXIX;2022-05-25

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