Effects of Diffusion of Hydrogen and Oxygen on Electrical Properties of Amorphous Oxide Semiconductor, In-Ga-Zn-O
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference18 articles.
1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
2. Present status of amorphous In–Ga–Zn–O thin-film transistors
3. Hydrogen as a Cause of Doping in Zinc Oxide
4. Electronic structure of the amorphous oxide semiconductor a-InGaZnO4-x: Tauc-Lorentz optical model and origins of subgap states
5. Effects of excess oxygen on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors
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