Analysis of Channel-Length Dependence of Residual Hydrogen Diffusion From the Gate Insulator During Oxygen Annealing Treatment in IGZO TFTs-Reference-Cited by-同舟云学术

Analysis of Channel-Length Dependence of Residual Hydrogen Diffusion From the Gate Insulator During Oxygen Annealing Treatment in IGZO TFTs

Published:2024-09 Issue:9 Volume:45 Page:1586-1589
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Yen Po-Yu¹^ORCID,Zhou Kuan-Ju¹^ORCID,Sun Pei-Jun²,Chen Yu-An¹,Chien Ya-Ting²,Huang Bo-Shen¹^ORCID,Lee Po-Yi¹,Juan Tzu-Hsuan¹,You Shao Kui¹,Shan Lin Yu¹,Sze Simon M.³,Chang Ting-Chang⁴^ORCID

Affiliation:

1. Department of Physics, National Sun Yat-sen University, Kaohsiung, Taiwan

2. Department of Materials and Optoelectronic Science, National Sun Yat-sen University, Kaohsiung, Taiwan

3. Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

4. Department of Physics, the Center of Crystal Research, College of Semiconductor and Advanced Technology Research, National Sun Yat-sen University, Kaohsiung, Taiwan

Funder

National Sun Yat-sen University Joint Center for high value Instruments

Center for Nano Science and Nano Technology Core Facilities Lab

National Science and Technology Council

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/55/10648890/10587280.pdf?arnumber=10587280

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5. Present status of amorphous In–Ga–Zn–O thin-film transistors