Study of Chemical Vapor Deposition of Manganese on Porous SiCOH Low-k Dielectrics Using Bis(ethylcyclopentadienyl)manganese-Reference-Cited by-同舟云学术

Study of Chemical Vapor Deposition of Manganese on Porous SiCOH Low-k Dielectrics Using Bis(ethylcyclopentadienyl)manganese

Published:2012 Issue:5 Volume:15 Page:H176
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Jourdan Nicolas,Krishtab Mikhail B.,Baklanov Mikhail R.,Meersschaut Johan,Wilson Christopher J.,Ablett James M.,Fonda Emiliano,Zhao Larry,Van Elshocht Sven,Tökei Zsolt,Vancoille Eric

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference21 articles.

1. Roy G. Gordon, Hoon Kim, Yeung Au, Hongtao Wang, Harish B. Bhandari, Yiqun Liu, Don K. Lee, and Youbo Lin , Proc. Advanced Metallization Conference , p. 1 (2008).

2. Formation of a manganese oxide barrier layer with thermal chemical vapor deposition for advanced large-scale integrated interconnect structure

3. Chemical Vapor Deposition of Mn and Mn Oxide and their Step Coverage and Diffusion Barrier Properties on Patterned Interconnect Structures

4. Effects of Water Desorption from SiO2Substrates on the Thickness of Manganese Oxide Diffusion Barrier Layer Formed by Chemical Vapor Deposition

5. Effect of energetic ions on plasma damage of porous SiCOH low-k materials

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