Effects of Water Desorption from SiO2Substrates on the Thickness of Manganese Oxide Diffusion Barrier Layer Formed by Chemical Vapor Deposition-Reference-Cited by-同舟云学术

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Effects of Water Desorption from SiO2Substrates on the Thickness of Manganese Oxide Diffusion Barrier Layer Formed by Chemical Vapor Deposition

Published:2010-05-20 Issue:5 Volume:49 Page:05FA12
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Matsumoto Kenji,Neishi Koji,Itoh Hitoshi,Miyoshi Hidenori,Sato Hiroshi,Hosaka Shigetoshi,Koike Junichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference7 articles.

1. Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers

2. Atomic layer deposition of metal and nitride thin films: Current research efforts and applications for semiconductor device processing

3. Formation of a manganese oxide barrier layer with thermal chemical vapor deposition for advanced large-scale integrated interconnect structure

4. Chemical Vapor Deposition of Mn and Mn Oxide and their Step Coverage and Diffusion Barrier Properties on Patterned Interconnect Structures

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Formation behavior and adhesion property of metallic Mn layer on porous SiOC by chemical vapor deposition;Japanese Journal of Applied Physics;2014-04-22

2. Simultaneous Formation of a Metallic Mn Layer and a MnOx/MnSixOyBarrier Layer by Chemical Vapor Deposition at 250 °C;Japanese Journal of Applied Physics;2013-05-01

3. Characterization of Chemically Vapor Deposited Manganese Barrier Layers Using X-ray Absorption Fine Structure;Japanese Journal of Applied Physics;2012-05-21

4. Characterization of Chemically Vapor Deposited Manganese Barrier Layers Using X-ray Absorption Fine Structure;Japanese Journal of Applied Physics;2012-05-01

5. Interface Reaction Behavior between Mn and SiO₂ Formed by RF Sputter Deposition;Key Engineering Materials;2012-03

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