Characterization of Chemically Vapor Deposited Manganese Barrier Layers Using X-ray Absorption Fine Structure-Reference-Cited by-同舟云学术

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Characterization of Chemically Vapor Deposited Manganese Barrier Layers Using X-ray Absorption Fine Structure

Published:2012-05-01 Issue:5S Volume:51 Page:05EB01
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ablett James M.,Wilson Christopher J.,Phuong Nguyen Mai,Koike Junichi,Tokei Zsolt,Sterbinsky George E.,Woicik Joseph C.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference6 articles.

1. Formation of a manganese oxide barrier layer with thermal chemical vapor deposition for advanced large-scale integrated interconnect structure

2. Structural and Electronic Properties of a Mn Oxide Diffusion Barrier Layer Formed by Chemical Vapor Deposition

3. Chemical Vapor Deposition of Mn and Mn Oxide and their Step Coverage and Diffusion Barrier Properties on Patterned Interconnect Structures

4. Phase identification of self-forming Cu–Mn based diffusion barriers on p-SiOC:H and SiO2 dielectrics using x-ray absorption fine structure

5. Effects of Water Desorption from SiO2Substrates on the Thickness of Manganese Oxide Diffusion Barrier Layer Formed by Chemical Vapor Deposition

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. In-situ surface and interface study of atomic oxygen modified carbon containing porous low-κ dielectric films for barrier layer applications;Journal of Applied Physics;2016-09-13

2. Photoemission study of the identification of Mn silicate barrier formation on carbon containing low-κ dielectrics;Microelectronic Engineering;2014-11

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