Interface Reaction Behavior between Mn and SiO2 Formed by RF Sputter Deposition

Abstract

The Present Work Investigated the Effects of Adsorbed Moisture in Substrates on the Growth of a Self-Forming Barrier Layer between Mn and SiO2. In Order to Control the Adsorbed Moisture, the Substrates of TEOS-SiO2/Si Were Pre-Annealed in Vacuum at Various Temperatures. Then, Mn Thin Films Were Deposited on the Substrate with or without Pre-Annealing. The Results of Interface Reaction after Additional Post-Annealing Indicated that an Interface Reaction Layer Becomes Thinner with Decreasing the Adsorbed Moisture in the SiO2Substrates.