Growth behavior of self-formed barrier at Cu–Mn∕SiO2 interface at 250–450°C
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2750402
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5. Highly reliable copper dual-damascene interconnects with self-formed MnSi/sub x/O/sub y/ barrier Layer
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