Doped Ru to enable next generation barrier-less interconnect

Abstract

An effective method for the formation of a Zn-doped Ru liner is demonstrated that realizes a self-forming barrier to achieve low resistivity interconnects for future back-end of line interconnect nodes. The “Ru–Zn” exhibits significantly improved adhesion to the dielectric and better electrochemical nucleation as compared to those of pristine Ru. In addition, time-dependent dielectric breakdown (TDDB) measurements indicate the inhibition of Cu ions drifting into the dielectric that precedes the TDDB failure. Complementary analysis using x-ray absorption spectroscopy, transmission electron microscope, and energy dispersive spectroscope suggests that the “Ru–Zn” forms an interfacial Zn–Si–O compound, and Zn, being more electronegative than Cu, protects the latter from oxidation. Calculation using density function theory also indicates that the Zn–Si–O compound adopts an intercalated structure at the interface of Ru/dielectric in which Zn occupies the interstitial sites within the Si–O lattice. We propose a twofold mechanism for improved TDDB performance: (1) the intercalated Zn atoms effectively block the diffusion of Cu ions through the dielectric and (2) Zn provides the cathodic protection of Cu that prevents the generation of mobile Cu ions that accelerate the TDDB.