Electromigration Reliability of Barrierless Ruthenium and Molybdenum for Sub-10 nm Interconnection-Reference-Cited by-同舟云学术

Electromigration Reliability of Barrierless Ruthenium and Molybdenum for Sub-10 nm Interconnection

Published:2023-04-26 Issue:5 Volume:5 Page:2447-2453
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Kim Jungkyun¹,Rhee Hakseung¹,Son Myeong Won¹,Park Juseong¹^ORCID,Kim Gwangmin¹,Jeon Jae Bum¹,Song Hanchan¹,Kim Geunwoo¹,Park Byong-Guk¹^ORCID,Han Jeong Hwan²^ORCID,Kim Kyung Min¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea

2. Department of Materials Science and Engineering, Seoul National University of Science and Technology (Seoultech), Seoul 01811, Republic of Korea

Funder

National Research Foundation of Korea

SK Hynix

Korea Advanced Institute of Science and Technology

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c00070

Reference50 articles.

1. Technology and reliability constrained future copper interconnects. II. Performance implications

2. Characterization and challenge of TDDB reliability in Cu/low K dielectric interconnect

3. Effect of low k dielectrics on electromigration reliability for Cu interconnects

4. Reliability challenges for advanced copper interconnects: Electromigration and time-dependent dielectric breakdown (TDDB)

5. An introduction to Cu electromigration

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