Electrografted P4VP for High Aspect Ratio Copper TSV Insulation in Via-Last Process Flow-Reference-Cited by-同舟云学术

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Electrografted P4VP for High Aspect Ratio Copper TSV Insulation in Via-Last Process Flow

Published:2016 Issue:6 Volume:5 Page:P340-P344
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Dequivre Thomas,Alam Elias Al,Maurais Josée,Brisard Gessie M.,Pratte J.-F.,Charlebois Serge A.

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference27 articles.

1. Three-dimensional silicon integration

2. Garrou P. Bower C. Ramm P. , Handbook of 3D integration (2008).

3. Microfabrication of Through Silicon Vias (TSV) for 3D SiP

4. Electromigration reliability issues in dual-damascene Cu interconnections

5. Burns J. , Three Dimensional System Integration Papanikolaou A. Soudris D. Radojcic R. , Editors, p. 21, Springer US, Boston, MA (2011).

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Alternative insulation liners for through-silicon vias: A comprehensive review;Materials Science in Semiconductor Processing;2023-11

2. All-wet encapsulation and electroless superfilling process for the fabrication of self-assembled-monolayer encapsulated copper interconnects with enhanced electromigration reliability;Materials Letters;2021-12

3. Optimization of TSV interconnects and BEOL layers under annealing process through fracture evaluation;Fatigue & Fracture of Engineering Materials & Structures;2020-02-09

4. Electroless Grafting of Polymer Insulation Layers in Through-Silicon Vias;ECS Journal of Solid State Science and Technology;2019

5. Design of thermally stable insulation film by radical grafting poly(methylacrylic acid) on silicon surface;Applied Surface Science;2019-01

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