Optimization of TSV interconnects and BEOL layers under annealing process through fracture evaluation-Reference-Cited by-同舟云学术

Optimization of TSV interconnects and BEOL layers under annealing process through fracture evaluation

Published:2020-02-09 Issue:7 Volume:43 Page:1433-1445
ISSN:8756-758X
Container-title:Fatigue & Fracture of Engineering Materials & Structures
language:en
Short-container-title:Fatigue Fract Eng Mater Struct

Author:

Qin F.¹,Zhang M.¹,Dai Y.¹^ORCID,Chen P.¹,An T.¹^ORCID,He H.²,Zhang H.²,Zheng J.²

Affiliation:

1. Institute of Electronics Packaging Technology and Reliability, College of Mechanical Engineering and Applied Electronics TechnologyBeijing University of Technology Beijing China

2. HiSilicon Technologies CO., LIMITED Shenzhen China

Funder

National Natural Science Foundation of China

Natural Science Foundation of Beijing Municipality

Beijing Municipal Commission of Education

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1111/ffe.13206

Reference31 articles.

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3. Study on Cu Protrusion of Through-Silicon Via

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5. LiaoH MiaoM WanX JinY ZhaoL LiB ZhuY SunX.Microfabrication of through silicon vias (TSV) for 3D SiP. IEEE 2008 International Conference on Solid‐State and Integrated–Circuit Technology (ICSICT).2008;1199‐1202.

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