Characterization of Deep Levels Introduced by RTA and by Subsequent Anneals in n-Type Silicon
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference18 articles.
1. Vacancy-Assisted Oxygen Precipitation Phenomena in Si
2. Analysis of the Nucleation Kinetics of Oxide Precipitates in Czochralski Silicon
3. A new family of thermal donors generated around 450 °C in phosphorus‐doped Czochralski silicon
4. Thermal donors in silicon: oxygen clusters or self-interstitial aggregates
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2. Extended Defects in O+-Implanted Si Layers and Their Luminescence;Crystallography Reports;2021-07
3. Peculiarities of electron emission from high-density deep levels of nanodefects in oxygen-implanted silicon;Journal of Physics: Conference Series;2020-03-01
4. Peculiarity of Electric Properties of Oxygen‐Implanted Silicon at Early Precipitation Stages;physica status solidi (a);2019-07-22
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