Light‐Induced Degradation in Annealed and Electron Irradiated Silicon-Reference-Cited by-同舟云学术

Light‐Induced Degradation in Annealed and Electron Irradiated Silicon

Published:2019-07-07 Issue:17 Volume:216 Page:1900284
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Lauer Kevin¹²^ORCID,Krischok Stefan²,Klein Thomas¹,Bähr Mario¹,Lawerenz Alexander¹,Röder Ralf¹,Ortlepp Thomas¹,Gohs Uwe³

Affiliation:

1. CiS Forschungsinstitut für Mikrosensorik GmbH Konrad-Zuse-Str. 14 99099 Erfurt Germany

2. TU IlmenauInstitut für Physik Weimarer Str. 32 98693 Ilmenau Germany

3. Leibniz-Institut für Polymerforschung Dresden e. V. Hohe Straße 6 01069 Dresden Germany

Funder

Bundesministerium für Wirtschaft und Technologie

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900284

Reference32 articles.

1. Review of light-induced degradation in crystalline silicon solar cells

2. Structure and transformation of the metastable boron- and oxygen-related defect center in crystalline silicon

3. Electronically activated boron-oxygen-related recombination centers in crystalline silicon

4. The nature of boron-oxygen lifetime-degrading centres in silicon

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