A new family of thermal donors generated around 450 °C in phosphorus‐doped Czochralski silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343115
Reference16 articles.
1. Electrical and infrared spectroscopic investigations of oxygen-related donors in silicon
2. Spectroscopic studies of 450° C thermal donors in silicon
3. Nature of thermal donors in silicon crystals
4. Mechanism of the Formation of Donor States in Heat-Treated Silicon
5. Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°K
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