Shallow n+ Junctions in Silicon by Arsenic Gas‐Phase Doping-Reference-Cited by-同舟云学术

Shallow n+ Junctions in Silicon by Arsenic Gas‐Phase Doping

Published:1994-05-01 Issue:5 Volume:141 Page:1378-1381
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Ransom C. M.¹,Jackson T. N.²,DeGelormo J. F.³,Zeller C.⁴,Kotecki D. E.¹,Graimann C.⁴,Sadana D. K.³,Benedict J.¹

Affiliation:

1. IBM Microelectronics Division, East Fishkill Facility, Hopewell Junction, New York 12533‐6531

2. The Pennsylvania State University, 228 Electrical Engineering West, University Park, Pennsylvania 16802

3. IBM Research Division, T.J. Watson Research Center, Yorktown Heights, New York 10598

4. Siemens Components, Inc., Iselin, New Jersey 08830

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2054928/pdf

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 3D to 2D perspectives - Traditional and new doping and metrology challenges at the nanoscale;Materials Science in Semiconductor Processing;2023-08

2. Arsenic Precipitation in Heavily Arsenic‐Doped Czochralski Silicon;physica status solidi (RRL) – Rapid Research Letters;2022-12-14

3. Tertiarybutylarsine damage-free thin-film doping and conformal surface coverage of substrate-released horizontal Si nanowires;Applied Surface Science;2020-04

4. AsH3 gas-phase ex situ doping 3D silicon structures;Journal of Applied Physics;2018-07-28

5. Diagnosis of phosphorus monolayer doping in silicon based on nanowire electrical characterisation;Journal of Applied Physics;2018-03-28