Arsenic Precipitation in Heavily Arsenic‐Doped Czochralski Silicon
Author:
Affiliation:
1. State Key Laboratory of Silicon Materials and School of Materials Science and Engineering Zhejang University Hangzhou 310027 China
2. QL Electronics Science (Quzhou) Co., Ltd. No. 52, Panlong South Road Quzhou 324000 China
Funder
National Natural Science Foundation of China
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202200403
Reference27 articles.
1. Arsenic Ion‐Implanted Shallow Junction
2. Shallow n+ Junctions in Silicon by Arsenic Gas‐Phase Doping
3. Crystallography of SiP and SiAs Single Crystals and of SiP Precipitates in Si
4. Precipitation of Phosphorus, Arsenic, and Boron in Thin Silicon Foils
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