AsH3 gas-phase ex situ doping 3D silicon structures-Reference-Cited by-同舟云学术

AsH3 gas-phase ex situ doping 3D silicon structures

Published:2018-07-28 Issue:4 Volume:124 Page:045703
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Duffy Ray¹^ORCID,Thomas Kevin¹,Galluccio Emmanuele¹^ORCID,Mirabelli Gioele¹^ORCID,Sultan Maeva¹²^ORCID,Kennedy Noel³,Petkov Nikolay⁴,Maxwell Graeme¹,Hydes Alan¹,O'Connell Dan¹^ORCID,Lyons Colin¹^ORCID,Sheehan Brendan¹,Schmidt Michael¹^ORCID,Holmes Justin D.³⁵,Hurley Paul K.¹³,Pelucchi Emanuele¹^ORCID,Connolly James⁶,Hatem Chris⁷,Long Brenda³

Affiliation:

1. Tyndall National Institute, University College Cork, Lee Maltings, Cork, Ireland

2. Institut National Des Sciences Appliquées, Toulouse, France

3. School of Chemistry, University College Cork, Cork, Ireland

4. Cork Institute of Technology, Bishopstown, Cork, Ireland

5. CRANN@AMBER, Trinity College Dublin, Dublin 2, Ireland

6. Applied Materials, Lee Maltings, Cork, Ireland

7. Applied Materials, Gloucester, Massachusetts 01930, USA

Funder

Enterprise Ireland

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5034213

Reference27 articles.

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3. Boron Diffusion in Silicon‐Concentration and Orientation Dependence, Background Effects, and Profile Estimation

4. Shallow n+ Junctions in Silicon by Arsenic Gas‐Phase Doping

5. Ultrashallow Junction Formation by Rapid Thermal Annealing of Arsenic-Adsorbed Layer

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