Exploring conductivity in ex-situ doped Si thin films as thickness approaches 5 nm

Author:

MacHale John1,Meaney Fintan1,Kennedy Noel2ORCID,Eaton Luke2,Mirabelli Gioele1ORCID,White Mary1,Thomas Kevin1,Pelucchi Emanuele1ORCID,Petersen Dirch Hjorth3,Lin Rong4,Petkov Nikolay5,Connolly James6,Hatem Chris7,Gity Farzan1ORCID,Ansari Lida1ORCID,Long Brenda12ORCID,Duffy Ray1ORCID

Affiliation:

1. Tyndall National Institute, University College Cork, Lee Maltings, Cork T12 R5CP, Ireland

2. School of Chemistry, University College Cork, Cork T12 K8AF, Ireland

3. Department of Physics, Technical University of Denmark, Fysikvej, Bld. 307, DK-2800 Kongens Lyngby, Denmark

4. CAPRES—A KLA Company, Scion-DTU, Bld. 373, DK-2800 Kongens Lyngby, Denmark

5. Cork Institute of Technology, Bishopstown, Cork T12 P928, Ireland

6. Applied Materials, Lee Maltings, Cork T12 R5CP, Ireland

7. Applied Materials, Gloucester, Massachusetts 01930, USA

Funder

SFI/HEA Centre for High End Computing

Enterprise Ireland

European Regional Development Fund

Horizon 2020 Framework Programme

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference29 articles.

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2. Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal

3. $\hbox{MoS}_{2}$ Dual-Gate MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Top-Gate Dielectric

4. M. J. H. Van Dal , N. Collaert , G. Doornbos , G. Vellianitis , G. Curatola , B. J. Pawlak , R. Duffy , C. Jonville , B. Degroote , E. Altamirano , E. Kunnen , M. Demand , S. Beckx , T. Vandeweyer , C. Delvaux , F. Leys , A. Hikavyy , R. Rooyackers , M. Kaiser , R. G. R. Weemaes , S. Biesemans , M. Jurczak , K. Anil , L. Witters , and R. J. P. Lander , in Digest of Technical Papers—Symposium on VLSI Technology (IEEE, 2007), p. 110.

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